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PN Junction Built-in Potential & Depletion Width Calculator

When p-type and n-type semiconductor regions contact, carrier diffusion forms a depleted space-charge region.

P-side acceptor impurity concentration.

N-side donor impurity concentration.

External reverse bias voltage.

Lattice temperature.

Calculated Result
0.327 µm

Depletion Layer Width (W)

Built-in Potential (V_bi)

0.753 V

Junction Capacitance

31655.4 pF/cm²

Peak Electric Field

46.0 kV/cm

Calculation Breakdown

  1. Built-in PotentialV_bi = V_T · ln(Na·Nd / ni²) = 0.0259 · ln(10000000000000000·100000000000000000 / 2.25e20) = 0.753 V
  2. Depletion WidthW = √((2·ε_s/q) · (1/Na + 1/Nd) · (V_bi + V_R)) = 0.327 µm

What Is the PN Junction Built-in Potential & Depletion Width Calculator?

A PN junction is the elementary building block of semiconductor diodes, solar cells, and bipolar transistors.

How Does the PN Junction Built-in Potential & Depletion Width Calculator Work?

Diffusing electrons and holes uncover fixed ionized dopants, setting up an opposing built-in electric field.

PN Junction Built-in Potential & Depletion Width Calculator Formula & Variables

The core mathematical equation utilized by this calculator is expressed as:

V_{ ext{bi}} = rac{k_B T}{q} lnleft( rac{N_a N_d}{n_i^2} ight), quad W = sqrt{ rac{2 epsilon_s}{q}left( rac{1}{N_a} + rac{1}{N_d} ight)(V_{ ext{bi}} + V_R)}

One-dimensional step junction electrostatics and space charge layer width.

How to Use the PN Junction Built-in Potential & Depletion Width Calculator

  1. Enter acceptor and donor dopant densities, applied reverse bias, and absolute temperature.

Step-by-Step Example Calculation

Silicon Step Junction at Equilibrium

Input Values:

acceptorDopingNaCm3:10000000000000000
donorDopingNdCm3:100000000000000000
appliedReverseBiasVolts:0
temperatureKelvin:300
Worked Steps: Built-in potential V_bi = 0.754 V, depletion width W = 0.329 µm, capacitance C_j = 31.4 pF/cm².

Understanding Your Result

Shows depletion width in micrometers, junction capacitance, and peak field at the metallurgical interface.

Factors That Affect the Result

  • Higher doping narrows the depletion region and increases junction capacitance.

When Should You Use This Calculator?

  • Varactor diode tuning, photodiode active area sizing, and avalanche breakdown modeling.

Assumptions & Limitations

  • Assumes abrupt step doping profile and complete ionization of dopants.

Frequently Asked Questions

Calculation Accuracy & Reference Note

Standard depletion approximation in semiconductor physics.

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