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High-k Metal Gate (HKMG) Equivalent Oxide Thickness (EOT) & Capacitance Calculator

Easily calculate and compute high-k metal gate (hkmg) equivalent oxide thickness (eot) & capacitance calculator with accurate equations, live formulas, and expert guidance.

Dielectric constant (e.g. 22 for HfO2, 30 for La2O3).

Physical thickness of high-k metal oxide.

Native or chemical SiO2 interfacial transition layer.

Calculated Result
1.04 nm

Equivalent Oxide Thickness (EOT)

Equivalent Oxide Thickness (EOT)

1.04 nm

Total Equivalent Oxide Thickness Eot Nm

1.04

Gate Capacitance Ff Per Um2

33.1

Gate Capacitance Uf Per Cm2

3.31

Total Physical Thickness Nm

3.1

1.04 — nm

Calculation Breakdown

  1. Applied FormulaCalculates the Equivalent Oxide Thickness (EOT) and areal gate capacitance of advanced high-k metal gate stacks containing an interfacial sub-nanometer SiO2 transition layer.EOT = t_{SiO_2} + \frac{\varepsilon_{SiO_2}}{\varepsilon_{high-k}} t_{high-k}, \quad C_{ox} = \frac{\varepsilon_0 \kappa_{SiO_2}}{EOT}

HKMG EOT & Capacitance Metric Output

Interactive visualization based on your current inputs

Calculated Value
0.00.30.50.81.0Equivalent Oxide Thickness (EOT)

What Is the High-k Metal Gate (HKMG) Equivalent Oxide Thickness (EOT) & Capacitance Calculator?

This tool computes high-k metal gate (hkmg) equivalent oxide thickness (eot) & capacitance calculator with high precision arithmetic.

How Does the High-k Metal Gate (HKMG) Equivalent Oxide Thickness (EOT) & Capacitance Calculator Work?

Calculates the Equivalent Oxide Thickness (EOT) and areal gate capacitance of advanced high-k metal gate stacks containing an interfacial sub-nanometer SiO2 transition layer.

High-k Metal Gate (HKMG) Equivalent Oxide Thickness (EOT) & Capacitance Calculator Formula & Variables

The core mathematical equation utilized by this calculator is expressed as:

EOT=tSiO2+εSiO2εhigh−kthigh−k,Cox=ε0κSiO2EOTEOT = t_{SiO_2} + \frac{\varepsilon_{SiO_2}}{\varepsilon_{high-k}} t_{high-k}, \quad C_{ox} = \frac{\varepsilon_0 \kappa_{SiO_2}}{EOT}

Calculates the Equivalent Oxide Thickness (EOT) and areal gate capacitance of advanced high-k metal gate stacks containing an interfacial sub-nanometer SiO2 transition layer.

How to Use the High-k Metal Gate (HKMG) Equivalent Oxide Thickness (EOT) & Capacitance Calculator

  1. Enter your parameters into the designated input fields to calculate the result immediately.

Step-by-Step Example Calculation

High-k Metal Gate (HKMG) Equivalent Oxide Thickness (EOT) & Capacitance Calculator Example

Input Values:

highKDielectricConstantK:22
highKPhysicalThicknessNm:2.5
interfacialOxideThicknessNm:0.6
Worked Steps: Sample evaluation based on standard reference conditions.

Understanding Your Result

The calculated primary figure indicates the optimal or required nm.

Factors That Affect the Result

  • Measurement tolerances, operational variance, and real-world conditions.

When Should You Use This Calculator?

  • Everyday budgeting, technical homework, professional estimation, and household projects.

Assumptions & Limitations

  • Assumes standard atmospheric or environmental parameters unless specified.

Frequently Asked Questions

Calculation Accuracy & Reference Note

Double-precision IEEE 754 arithmetic with validated empirical constants.

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